Electrical Characterization and Conduction Mechanism of High-k Ti1-xSixO2 Gate Dielectrics
نویسندگان
چکیده
Ti1-xSixO2 dielectric thin films were prepared by cosputtering deposition at room temperature. Electrical properties of high-k Ti1-xSixO2 dielectric thin film were characterized and the leakage current mechanism was analyzed. As the TiO2 power increases, the dielectric constant is increased from 14 to 43 and the dominant leakage current mechanism is changed from Schottky emission to Poole-Frenkel emission.
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